Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
A study on degradation mechanism of flexible a-InGaZnO thin film transistor under repetitive bending stress using simulation
- Authors
- 오새룬터
- Issue Date
- 20181213
- Place
- Nagoya, Japan
- Conference Name
- 25th International Display Workshops (IDW)
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.