A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling
DC Field | Value | Language |
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dc.contributor.author | Park, Hongjong | - |
dc.contributor.author | Nam, Hyosung | - |
dc.contributor.author | Choi, Kwangseok | - |
dc.contributor.author | Kim, Junghyun | - |
dc.contributor.author | Kwon, Youngwoo | - |
dc.date.accessioned | 2021-06-22T12:01:13Z | - |
dc.date.available | 2021-06-22T12:01:13Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2018-06 | - |
dc.identifier.issn | 0018-9480 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/6206 | - |
dc.description.abstract | Two-stage reactively matched gain cells are proposed to implement a high-gain multioctave distributed power amplifier (DPA). The proposed reactively matched distributed amplifier (RMDA) structure shows high gain and power in a small die size. Detailed analysis is presented to understand the design criteria for interstage matching of reactively matched cells. A shared dc bias network is proposed to simplify the biasing of each section to reduce the DPA die size. The thermal coupling effect of GaN high-power amplifier is minimized by optimizing the chip layout. The theoretical analysis is verified by the simulation and supported by the measured data. Two RMDAs are fabricated with a commercial 0.25-mu m GaN HEMT process. The implemented RMDA with the compact transistor layout has been implemented in a small die size of 10.7 mm(2) and shows output powers reaching 40.3-43.9 dBm, power added efficiencies (PAEs) of 16-27%, and small-signal gains of 15.3-23.2 dB. The RMDA with the reduced thermal coupling achieves 40.6-43.4 dBm with a peak PAE of 29% in a slightly larger die size of 13.8 mm(2). To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, showing very high gain and efficiency over multioctave bandwidth in a small die size. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | A 6-18-GHz GaN Reactively Matched Distributed Power Amplifier Using Simplified Bias Network and Reduced Thermal Coupling | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Junghyun | - |
dc.identifier.doi | 10.1109/TMTT.2018.2817521 | - |
dc.identifier.scopusid | 2-s2.0-85048233354 | - |
dc.identifier.wosid | 000434463500007 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.66, no.6, pp.2638 - 2648 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.title | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | - |
dc.citation.volume | 66 | - |
dc.citation.number | 6 | - |
dc.citation.startPage | 2638 | - |
dc.citation.endPage | 2648 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.subject.keywordPlus | GAIN | - |
dc.subject.keywordPlus | BANDWIDTH | - |
dc.subject.keywordPlus | DESIGN | - |
dc.subject.keywordPlus | MODULE | - |
dc.subject.keywordPlus | GHZ | - |
dc.subject.keywordAuthor | Broadband amplifier | - |
dc.subject.keywordAuthor | distributed amplifier (DA) | - |
dc.subject.keywordAuthor | GaN monolithic microwave integrated circuit (MMIC) | - |
dc.subject.keywordAuthor | multioctave | - |
dc.subject.keywordAuthor | power amplifier (PA) | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/8330036v | - |
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