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The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (vol 7, 10885, 2017)
- Issue Date
- May-2018
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- SCIENTIFIC REPORTS, v.8, no.1, pp 1 - 1
- Pages
- 1
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- SCIENTIFIC REPORTS
- Volume
- 8
- Number
- 1
- Start Page
- 1
- End Page
- 1
- ISSN
- 2045-2322
- Abstract
- A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper.
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