Atomic layer deposited strontium niobate thin films as new high-k dielectrics
DC Field | Value | Language |
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dc.contributor.author | Lee, Seung Won | - |
dc.contributor.author | Kim, Hyo Bae | - |
dc.contributor.author | Kim, Chang Min | - |
dc.contributor.author | Kwon, Se Hun | - |
dc.contributor.author | Ahn, Ji-Hoon | - |
dc.date.accessioned | 2021-06-22T04:43:51Z | - |
dc.date.available | 2021-06-22T04:43:51Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2021-03 | - |
dc.identifier.issn | 0167-577X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/658 | - |
dc.description.abstract | Strontium niobate thin films have potential for next-generation high-k dielectric applications. In this work, we investigated the fabrication of SrxNb1-xOy thin films by atomic layer deposition for the first time and examined their physical and electrical characteristics. The composition of the SrxNb1-xOy thin film could be effectively controlled by introducing a super-cycle, and it was confirmed that the crystallinity after annealing varied depending on the composition. The Sr-rich film was crystalline after annealing and showed a high dielectric constant of approximately 75. In addition, it was observed that the Nb-rich film had a relatively large dielectric constant of approximately 65 even though it was amorphous, confirming that it could be applied as a next-generation high-k material. This research is the first step toward a new high-k dielectric candidate, which we believe can be applied to next-generation semiconductor devices through further research to improve the characteristics. © 2020 Elsevier B.V. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier BV | - |
dc.title | Atomic layer deposited strontium niobate thin films as new high-k dielectrics | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Ji-Hoon | - |
dc.identifier.doi | 10.1016/j.matlet.2020.129220 | - |
dc.identifier.scopusid | 2-s2.0-85099228719 | - |
dc.identifier.wosid | 000615986100028 | - |
dc.identifier.bibliographicCitation | Materials Letters, v.286, pp.1 - 4 | - |
dc.relation.isPartOf | Materials Letters | - |
dc.citation.title | Materials Letters | - |
dc.citation.volume | 286 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 4 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Crystallinity | - |
dc.subject.keywordPlus | Dielectric materials | - |
dc.subject.keywordPlus | Nanocrystalline materials | - |
dc.subject.keywordPlus | Niobium compounds | - |
dc.subject.keywordPlus | Semiconductor devices | - |
dc.subject.keywordPlus | Strontium | - |
dc.subject.keywordPlus | Strontium compounds | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Atomic layer deposited | - |
dc.subject.keywordPlus | Electrical characteristic | - |
dc.subject.keywordPlus | High dielectric constants | - |
dc.subject.keywordPlus | High-k materials | - |
dc.subject.keywordPlus | Large dielectric constant | - |
dc.subject.keywordPlus | New high | - |
dc.subject.keywordPlus | Strontium niobate | - |
dc.subject.keywordPlus | Super cycles | - |
dc.subject.keywordPlus | High-k dielectric | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | High-k dielectrics | - |
dc.subject.keywordAuthor | Strontium niobate | - |
dc.subject.keywordAuthor | Super-cycle | - |
dc.subject.keywordAuthor | Thin film | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0167577X20319285?via%3Dihub | - |
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