Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

Tailoring polymer microstructure for the mitigation of the pattern collapse in sub-10 nm EUV lithography: Multiscale simulation study

Authors
Kim, M.Park, S.Choi, J.Moon, J.Cho, M.
Issue Date
2021
Publisher
Elsevier B.V.
Keywords
Crosslink; Extreme ultraviolet lithography; Multiscale simulation; Photoresist; Polymer deformation; Polymer patterning
Citation
Applied Surface Science, v.536
Indexed
SCIE
SCOPUS
Journal Title
Applied Surface Science
Volume
536
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/681
DOI
10.1016/j.apsusc.2020.147514
ISSN
0169-4332
Abstract
Photoresist (PR) nanopatterning using extreme-ultraviolet-lithography (EUVL) drives significant advances in integrated-circuit downsizing; however, sub-10 nm nodes severely suffer from collapse in the rinsing process (structural rigidity ↓, capillary force ↑ in denser line patterns). To mitigate collapse, we propose a new type of photoresist, hybrid material, with delicate polymer microstructure across the exposure boundary; a blend of linear chains for exposed domain and crosslinked network for masked area. This hybrid system is synthesized in a computational model through exposure-bake-curing process that generates a steep chemical gradient at the exposure boundary of polymer and triggers selective crosslinking reaction on the protected functional groups. The crosslinked structure is formed exclusively for the protection group-rich unexposed region; thus, the chemical joints tightly anchor the masked chains in aqueous solution, leading to nanoscale smoothing on the interfacial surface. Moreover, chemical linkage on the residual chains contributes to force delivery on the polymer matrix under macroscopic strain. Among the candidate materials, the hybrid resist incorporating a bicyclic crosslinker exhibits the best load transfer efficiency (E 101.4% ↑) and uniform interfacial surface (roughness 26.4% ↓), which significantly alleviates mechanical deformation and extends the critical aspect ratio of the pattern over the neat system. © 2020 Elsevier B.V.
Files in This Item
There are no files associated with this item.
Appears in
Collections
COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MECHANICAL ENGINEERING > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Researcher Choi, Joonmyung photo

Choi, Joonmyung
ERICA 공학대학 (DEPARTMENT OF MECHANICAL ENGINEERING)
Read more

Altmetrics

Total Views & Downloads

BROWSE