Improved CdS quantum dot distribution on a TiO2 photoanode by an atomic-layer-deposited ZnS passivation layer for quantum dot-sensitized solar cells
- Authors
- Jung, Eun Sun; Basit, Muhammad Abdul; Abbas, Muhammad Awais; Ali, Ijaz; Kim, Dae Woong; Park, Young Min; Bang, Jin Ho; Park, Tae Joo
- Issue Date
- Dec-2020
- Publisher
- Elsevier BV
- Keywords
- QDSSCs; Atomic layer deposition; ZnS passivation Layer; QDs distribution; CdS
- Citation
- Solar Energy Materials and Solar Cells, v.218, pp.1 - 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Solar Energy Materials and Solar Cells
- Volume
- 218
- Start Page
- 1
- End Page
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/733
- DOI
- 10.1016/j.solmat.2020.110753
- ISSN
- 0927-0248
- Abstract
- An ultrathin (< similar to 0.5 nm) ZnS interfacial passivation layer (IPL) was produced by atomic layer deposition in order to improve the performance of CdS quantum-dot (QD) sensitized solar cells. The mutable role of the top ZnS IPL, deposited after QD sensitization, enhanced light absorbance by acting as an anti-reflective coating resulting in increased photocurrent. The bottom ZnS IPL deposited on the TiO2 photoanode before QD sensitization led to a uniform distribution of smaller-sized QD microaggregates by modification of the surface energy of TiO2, which improved the photo-generated charge carrier injection from QD to TiO2. Furthermore, both ZnS IPLs have roles as the recombination barrier layer. Consequently, the photoconversion efficiency was enhanced by approximately 15% and 30% in cells with top and bottom ZnS IPLs, respectively.
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