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6-18 GHz Watt-Level Switchless Dual-Band PA MMIC using Coupled- Line-Based Diplexer

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dc.contributor.authorChoi, Kwangseok-
dc.contributor.authorPark, Hongjong-
dc.contributor.authorKim, Junghyun-
dc.contributor.authorKwon, Youngwoo-
dc.date.accessioned2021-06-22T13:02:04Z-
dc.date.available2021-06-22T13:02:04Z-
dc.date.issued2018-06-
dc.identifier.issn0149-645X-
dc.identifier.issn2576-7216-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/7887-
dc.description.abstractIn this work, a watt-level switchless dual-band power amplifier (PA) has been developed for multi-octave operation. To switchless dual-band operation, we proposed a new coupled-line based diplexer structure at the inter-stage and output-stage of the PA. Detailed analysis is performed to show the operation principle of the proposed diplexer. The designed dual-band PA is fabricated with commercial 0.25-μm GaN HEMT process. Fabricated PA shows over 15 dB small-signal gain at 5-11 GHz in low-band mode and 9-18 GHz in high-band mode. The measured average output power and power-added efficiency (PAE) is 35 dBm, 23% at low-band mode and 37 dBm, 26% at high-band mode. © 2018 IEEE.-
dc.format.extent4-
dc.language영어-
dc.language.isoENG-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.title6-18 GHz Watt-Level Switchless Dual-Band PA MMIC using Coupled- Line-Based Diplexer-
dc.typeArticle-
dc.publisher.location미국-
dc.identifier.doi10.1109/MWSYM.2018.8439169-
dc.identifier.scopusid2-s2.0-85053040896-
dc.identifier.wosid000451173600357-
dc.identifier.bibliographicCitationIEEE MTT-S International Microwave Symposium Digest, v.2018-June, pp 1352 - 1355-
dc.citation.titleIEEE MTT-S International Microwave Symposium Digest-
dc.citation.volume2018-June-
dc.citation.startPage1352-
dc.citation.endPage1355-
dc.type.docTypeConference Paper-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaEngineering-
dc.relation.journalWebOfScienceCategoryEngineering, Electrical & Electronic-
dc.subject.keywordPlusGallium nitride-
dc.subject.keywordPlusIII-V semiconductors-
dc.subject.keywordPlusMonolithic microwave integrated circuits-
dc.subject.keywordPlusMultiplexing equipment-
dc.subject.keywordPlusPower amplifiers-
dc.subject.keywordPlusAverage output power-
dc.subject.keywordPlusDiplexers-
dc.subject.keywordPlusDual-band operations-
dc.subject.keywordPlusDual-band PA-
dc.subject.keywordPlusGaN MMIC-
dc.subject.keywordPlusPower-added efficiency-
dc.subject.keywordPlusSmall signal gain-
dc.subject.keywordPlusswitchless-
dc.subject.keywordPlusBroadband amplifiers-
dc.subject.keywordAuthorbroadband amplifier-
dc.subject.keywordAuthordiplexer-
dc.subject.keywordAuthordual-band PA-
dc.subject.keywordAuthorGaN MMIC-
dc.subject.keywordAuthorreactively matched PA-
dc.subject.keywordAuthorswitchless-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8439169-
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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