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Synthesis mechanism of MoS2 layered crystals by chemical vapor deposition using MoO3 and sulfur powders

Authors
Hyun, Cheol MinChoi, Jeong HunLee, Seung WonPark, Jeong HwaLee, Kang TaekAhn, Ji-Hoon
Issue Date
Oct-2018
Publisher
Elsevier BV
Keywords
2-Dimensional materials; Chemical vapor deposition; Crystal growth; Growth mechanism; MoS2
Citation
Journal of Alloys and Compounds, v.765, pp.380 - 384
Indexed
SCIE
SCOPUS
Journal Title
Journal of Alloys and Compounds
Volume
765
Start Page
380
End Page
384
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/7900
DOI
10.1016/j.jallcom.2018.06.183
ISSN
0925-8388
Abstract
Monolayer MoS2 layered crystals have attracted significant attention owing to their potential applicability in emerging devices, and chemical vapor deposition (CVD) is the best method so far to obtain monolayer MoS2 single crystals. Although many studies have been published on MoS2 monolayer crystals grown by CVD, there is a lack of understanding of its synthesis pathway. Therefore, in this paper, we studied the mechanism of the synthesis pathway when monolayer MoS2 crystals are synthesized by conventional CVD using MoO3 and sulfur powders. It was found that solid MoO2 produced by the reduction of MoO3 by sulfur plays a very important role in the synthesis of MoS2 layered crystals as an intermediate phase. © 2018 Elsevier B.V.
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ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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