Effect of interfacial passivation on inverted pyramid silicon/poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) heterojunction solar cells
- Authors
- Ali, Gohar; Shinde, Sambhaji S.; Sami, Abdul; Kim, Sung-Hae; Wagh, Nayantara K.; Lee, Jung-Ho
- Issue Date
- Sep-2020
- Publisher
- Elsevier Sequoia
- Keywords
- Si/PEDOT; PSS; Hybrid solar cells; Inverted pyramids; Interfacial passivation; Atomic layer deposition
- Citation
- Thin Solid Films, v.709, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 709
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/897
- DOI
- 10.1016/j.tsf.2020.138139
- ISSN
- 0040-6090
- Abstract
- The poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) and inverted pyramid n-silicon heterojunction solar cells have been extensively investigated based on their light trapping behaviour, rationally high efficiency and cost effectiveness. However, inferior junction conformity still remains a great challenge. In this work, we present the effect of passivation using aluminium oxide (Al2O3) on the front surface and titanium oxide (TiO2) on rear interface in the inverted pyramid -Si/PEDOT: PSS heterojunction solar cells using the atomic layer deposition technique. The front surface Al2O3 layer can enhance the surface energy, which generates the uniform coating of PEDOT:PSS, acting as an electron blocking layer. Furthermore, TiO2 thin layer deposited on rear interface works as a hole blocking layer, which can suppress the electrical losses and the charge recombination. The best cell demonstrated a conversion efficiency of 16.04% with an open-circuit voltage of 0.63 V, fill factor of 71.5% and a high current density of 35.45 mA/cm(2). These findings suggest a promising approach to attainment of next-generation hybrid solar cells.
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