The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer
DC Field | Value | Language |
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dc.contributor.author | Shin, Yeonwoo | - |
dc.contributor.author | Kim, Sang Tae | - |
dc.contributor.author | Kim, Kuntae | - |
dc.contributor.author | Kim, Mi Young | - |
dc.contributor.author | Oh, Saeroonter | - |
dc.contributor.author | Jeong, Jae Kyeong | - |
dc.date.accessioned | 2021-06-22T13:42:10Z | - |
dc.date.available | 2021-06-22T13:42:10Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2017-09 | - |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/8973 | - |
dc.description.abstract | High-mobility indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) are achieved through low-temperature crystallization enabled via a reaction with a transition metal catalytic layer. For conventional amorphous IGZO TFTs, the active layer crystallizes at thermal annealing temperatures of 600 degrees C or higher, which is not suitable for displays using a glass substrate. The crystallization temperature is reduced when in contact with a Ta layer, where partial crystallization at the IGZO back-channel occurs with annealing at 300 degrees C, while complete crystallization of the active layer occurs at 400 degrees C. The field-effect mobility is significantly boosted to 54.0 cm(2)/V.s for the IGZO device with a metal-induced polycrystalline channel formed at 300 degrees C compared to 18.1 cm(2)/V.s for an amorphous IGZO TFT without a catalytic layer. This work proposes a facile and effective route to enhance device performance by crystallizing the IGZO layer with standard annealing temperatures, without the introduction of expensive laser irradiation processes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | NATURE PUBLISHING GROUP | - |
dc.title | The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Oh, Saeroonter | - |
dc.identifier.doi | 10.1038/s41598-017-11461-0 | - |
dc.identifier.scopusid | 2-s2.0-85029065387 | - |
dc.identifier.wosid | 000409562000032 | - |
dc.identifier.bibliographicCitation | SCIENTIFIC REPORTS, v.7, no.1, pp.1 - 10 | - |
dc.relation.isPartOf | SCIENTIFIC REPORTS | - |
dc.citation.title | SCIENTIFIC REPORTS | - |
dc.citation.volume | 7 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 10 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalWebOfScienceCategory | Multidisciplinary Sciences | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | SI | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | THIN-FILM-TRANSISTOR | - |
dc.subject.keywordAuthor | SEMICONDUCTOR | - |
dc.subject.keywordAuthor | SI | - |
dc.subject.keywordAuthor | FABRICATION | - |
dc.subject.keywordAuthor | DISPLAYS | - |
dc.identifier.url | https://www.nature.com/articles/s41598-017-11461-0 | - |
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