Adsorption of sodium dodecyl sulfate on cleaning of an N-polar GaN surface in an alkaline solution
DC Field | Value | Language |
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dc.contributor.author | Kim, Min-Su | - |
dc.contributor.author | Paluvai, Nagarjuna Reddy | - |
dc.contributor.author | Kim, Hyun-Tae | - |
dc.contributor.author | Park, Jin-Goo | - |
dc.date.accessioned | 2021-06-22T13:44:11Z | - |
dc.date.available | 2021-06-22T13:44:11Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.issn | 0921-5107 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9098 | - |
dc.description.abstract | The present study investigated the removal of contaminated particles from a polished N-polar GaN surface using an alkaline cleaning solution along with sodium dodecyl sulfate (SDS) surfactant. The zeta potential, etch rate, and particle removal efficiency (PRE) of N-polar GaN surfaces were reported. A lower etch rate and smoother N-polar GaN surface were obtained when the surface is treated with a diluted NH4OH solution. However, the etch rate and PRE of the N-polar GaN surface increased as a function of the pH of the NH4OH solution. The PRE of the N-polar GaN surface reached to 96% at pH 10 with a high surface roughness of 0.5 nm. SDS was added to the ammonia solutions to control the surface roughness. The N-polar GaN surface reached 100% PRE and surface roughness shown less than 0.4 nm when cleaned in a diluted NH4OH solution with 5 mM SDS surfactant in a megasonic bath. (C) 2017 Elsevier B.V. All rights reserved. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Elsevier BV | - |
dc.title | Adsorption of sodium dodecyl sulfate on cleaning of an N-polar GaN surface in an alkaline solution | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Goo | - |
dc.identifier.doi | 10.1016/j.mseb.2017.04.003 | - |
dc.identifier.scopusid | 2-s2.0-85017699352 | - |
dc.identifier.wosid | 000403630000001 | - |
dc.identifier.bibliographicCitation | Materials Science & Engineering B: Solid-State Materials for Advanced Technology, v.222, pp.1 - 6 | - |
dc.relation.isPartOf | Materials Science & Engineering B: Solid-State Materials for Advanced Technology | - |
dc.citation.title | Materials Science & Engineering B: Solid-State Materials for Advanced Technology | - |
dc.citation.volume | 222 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | VAPOR-PHASE EPITAXY | - |
dc.subject.keywordPlus | GALLIUM NITRIDE | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | ALN | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | GAN(0001) | - |
dc.subject.keywordPlus | REMOVAL | - |
dc.subject.keywordAuthor | N-polar GaN surface | - |
dc.subject.keywordAuthor | Wafer bonding | - |
dc.subject.keywordAuthor | Particle removal efficiency (PRE) | - |
dc.subject.keywordAuthor | Surface roughness | - |
dc.subject.keywordAuthor | Sodium dodecyl sulfate (SDS) | - |
dc.identifier.url | https://linkinghub.elsevier.com/retrieve/pii/S0921510717300880 | - |
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