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Adsorption of sodium dodecyl sulfate on cleaning of an N-polar GaN surface in an alkaline solution

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dc.contributor.authorKim, Min-Su-
dc.contributor.authorPaluvai, Nagarjuna Reddy-
dc.contributor.authorKim, Hyun-Tae-
dc.contributor.authorPark, Jin-Goo-
dc.date.accessioned2021-06-22T13:44:11Z-
dc.date.available2021-06-22T13:44:11Z-
dc.date.created2021-01-21-
dc.date.issued2017-08-
dc.identifier.issn0921-5107-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/9098-
dc.description.abstractThe present study investigated the removal of contaminated particles from a polished N-polar GaN surface using an alkaline cleaning solution along with sodium dodecyl sulfate (SDS) surfactant. The zeta potential, etch rate, and particle removal efficiency (PRE) of N-polar GaN surfaces were reported. A lower etch rate and smoother N-polar GaN surface were obtained when the surface is treated with a diluted NH4OH solution. However, the etch rate and PRE of the N-polar GaN surface increased as a function of the pH of the NH4OH solution. The PRE of the N-polar GaN surface reached to 96% at pH 10 with a high surface roughness of 0.5 nm. SDS was added to the ammonia solutions to control the surface roughness. The N-polar GaN surface reached 100% PRE and surface roughness shown less than 0.4 nm when cleaned in a diluted NH4OH solution with 5 mM SDS surfactant in a megasonic bath. (C) 2017 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.language.isoen-
dc.publisherElsevier BV-
dc.titleAdsorption of sodium dodecyl sulfate on cleaning of an N-polar GaN surface in an alkaline solution-
dc.typeArticle-
dc.contributor.affiliatedAuthorPark, Jin-Goo-
dc.identifier.doi10.1016/j.mseb.2017.04.003-
dc.identifier.scopusid2-s2.0-85017699352-
dc.identifier.wosid000403630000001-
dc.identifier.bibliographicCitationMaterials Science & Engineering B: Solid-State Materials for Advanced Technology, v.222, pp.1 - 6-
dc.relation.isPartOfMaterials Science & Engineering B: Solid-State Materials for Advanced Technology-
dc.citation.titleMaterials Science & Engineering B: Solid-State Materials for Advanced Technology-
dc.citation.volume222-
dc.citation.startPage1-
dc.citation.endPage6-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.description.journalRegisteredClassscopus-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusVAPOR-PHASE EPITAXY-
dc.subject.keywordPlusGALLIUM NITRIDE-
dc.subject.keywordPlusLAYER-
dc.subject.keywordPlusALN-
dc.subject.keywordPlusTEMPERATURE-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusGAN(0001)-
dc.subject.keywordPlusREMOVAL-
dc.subject.keywordAuthorN-polar GaN surface-
dc.subject.keywordAuthorWafer bonding-
dc.subject.keywordAuthorParticle removal efficiency (PRE)-
dc.subject.keywordAuthorSurface roughness-
dc.subject.keywordAuthorSodium dodecyl sulfate (SDS)-
dc.identifier.urlhttps://linkinghub.elsevier.com/retrieve/pii/S0921510717300880-
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ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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