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Design and characterization of electrically self-isolated GaN-on-Si junctionless fin-shaped-channel field-effect transistor with higher cost-effectiveness for low-power applications
- Authors
- Lee, Seongmin; Lee, Jeongmin; Cho, Seongjae
- Issue Date
- Aug-2015
- Publisher
- IOP PUBLISHING LTD
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.54, no.8
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 54
- Number
- 8
- ISSN
- 0021-4922
- Abstract
- A GaN-on-Si junctionless FET with a feasible structure is suggested and simulated. A silicon-on-insulator channel is replaced by a GaN-on-Si channel in the proposed device. The GaN-on-Si heterostructure forms an electrically self-isolated channel owing to its large band offset. Two-and three-dimensional (2D and 3D) device simulations were cooperatively performed to optimize the device in terms of gate length, channel thickness, channel doping concentration, and substrate concentration, targeting low-power applications. (C) 2015 The Japan Society of Applied Physics
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)