Low-Temperature, Solution-Processed ZrO2:B Thin Film: A Bifunctional Inorganic/Organic Interfacial Glue for Flexible Thin-Film Transistors
- Authors
- Park, Jee Ho; Oh, Jin Young; Han, Sun Woong; Lee, Tae Il; Baik, Hong Koo
- Issue Date
- 4-Mar-2015
- Publisher
- AMER CHEMICAL SOC
- Keywords
- bifunctional inorganic/organic interfacial glue; flexible electronics; solution processing; thin-film transistor; boron-doped peroxo-zirconium oxide
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.7, no.8, pp.4494 - 4503
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 7
- Number
- 8
- Start Page
- 4494
- End Page
- 4503
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/10686
- DOI
- 10.1021/acsami.5b00036
- ISSN
- 1944-8244
- Abstract
- A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (J(leak)) of 4.38 x 10(-8) A/cm(-2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (I-on/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices.
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