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Electrical Characteristics of Metal Catalyst-Assisted Etched Rough Silicon Nanowire Depending on the Diameter Size
- Issue Date
- 14-Jan-2015
- Publisher
- AMER CHEMICAL SOC
- Keywords
- diameter modulation; dielectrophorestic alignment; field effect transistor; silicon nanowires; transfer method
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.7, no.1, pp.929 - 934
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 7
- Number
- 1
- Start Page
- 929
- End Page
- 934
- ISSN
- 1944-8244
- Abstract
- The dependence of electrical properties of rough and cylindrical Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted etching (MCE) on the size of the NWs diameter was demonstrated. Using a decal-printing and transfer process assisted by Al2O3 sacrificial layer, the Si NW field effect transistor (FET) embedded in a polyvinylphenol adhesive and dielectric layer were fabricated. As the diameter of Si NW increased, the mobility of FET increased from 80.51 to 170.95 cm(2)/V.s and the threshold voltage moved from -7.17 to 0 V because phononelectron wave function overlaps, surface scattering, and defect scattering decreased and gate coupling increased as the ratio of surface-to-volume got reduced.
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Related Researcher
- Lee, Tae Il
- Engineering (Department of Materials Science & Engineering)