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RF 마그네트론 스퍼터링을 이용한 ITO 기판에불순물 증착에 관한 연구Study of Impurity Deposition on ITO Substrate using RF Magnetron Sputtering
- Other Titles
- Study of Impurity Deposition on ITO Substrate using RF Magnetron Sputtering
- Issue Date
- 2015
- Publisher
- 대한전기학회
- Keywords
- ITO substrate; RF power; Transmittance; Temperature
- Citation
- 전기학회 논문지 P권, v.64, no.4, pp.277 - 280
- Journal Title
- 전기학회 논문지 P권
- Volume
- 64
- Number
- 4
- Start Page
- 277
- End Page
- 280
- ISSN
- 1229-800x
- Abstract
- In this paper, we have studied the surface property and transmittance of n- and p-type thin film deposited on ITO substrate. In n-type samples, the average particle size was large and uniform as RF power was increased, and the best results were shown at the condition of the temperature of 300℃ and 200 W of RF power. The transmittance of the sample deposited for 20 minutes was 74.82% and the light wave was increased to 800 nm. In p-type samples, the results were 71.21% and 789 nm at the deposition condition of the RF power of 250 W and the temperature of 250℃.
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Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
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