Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation
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dc.contributor.author | Roh, Flee Bum | - |
dc.contributor.author | Seo, Jae Hwa | - |
dc.contributor.author | Yoon, Young Jun | - |
dc.contributor.author | Bae, Jin-Hyuk | - |
dc.contributor.author | Cho, Eou-Sik | - |
dc.contributor.author | Lee, Jung-Hee | - |
dc.contributor.author | Cho, Seongjae | - |
dc.contributor.author | Kang, In Man | - |
dc.date.available | 2020-02-28T15:45:15Z | - |
dc.date.created | 2020-02-06 | - |
dc.date.issued | 2014-11 | - |
dc.identifier.issn | 1975-0102 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12148 | - |
dc.description.abstract | In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at V-DS = 1 V, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain (A(v)), unit-gain frequency (f(unity)), and cut-off frequency (f(T)). The Ge/GaAs HGD pnpn TFET demonstrated A(v) = 19.4 dB, f(unity) = 10 THz, f(T) = 0.487 THz and f(max) = 18THz. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPRINGER SINGAPORE PTE LTD | - |
dc.relation.isPartOf | JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | - |
dc.subject | FET | - |
dc.title | Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.wosid | 000344040500035 | - |
dc.identifier.doi | 10.5370/JEET.2014.9.6.2070 | - |
dc.identifier.bibliographicCitation | JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.9, no.6, pp.2070 - 2078 | - |
dc.identifier.kciid | ART001925153 | - |
dc.identifier.scopusid | 2-s2.0-84908529598 | - |
dc.citation.endPage | 2078 | - |
dc.citation.startPage | 2070 | - |
dc.citation.title | JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY | - |
dc.citation.volume | 9 | - |
dc.citation.number | 6 | - |
dc.contributor.affiliatedAuthor | Cho, Eou-Sik | - |
dc.contributor.affiliatedAuthor | Cho, Seongjae | - |
dc.type.docType | Article | - |
dc.subject.keywordAuthor | Frequency response | - |
dc.subject.keywordAuthor | Gate-all-around | - |
dc.subject.keywordAuthor | Heterojunction | - |
dc.subject.keywordAuthor | Tunneling field-effect transistor | - |
dc.subject.keywordAuthor | Hetero-gate-dielectric | - |
dc.subject.keywordAuthor | TCAD | - |
dc.subject.keywordAuthor | Mixed-mode simulation | - |
dc.subject.keywordPlus | FET | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
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