Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation
- Authors
- Roh, Flee Bum; Seo, Jae Hwa; Yoon, Young Jun; Bae, Jin-Hyuk; Cho, Eou-Sik; Lee, Jung-Hee; Cho, Seongjae; Kang, In Man
- Issue Date
- Nov-2014
- Publisher
- SPRINGER SINGAPORE PTE LTD
- Keywords
- Frequency response; Gate-all-around; Heterojunction; Tunneling field-effect transistor; Hetero-gate-dielectric; TCAD; Mixed-mode simulation
- Citation
- JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.9, no.6, pp.2070 - 2078
- Journal Title
- JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
- Volume
- 9
- Number
- 6
- Start Page
- 2070
- End Page
- 2078
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/12148
- DOI
- 10.5370/JEET.2014.9.6.2070
- ISSN
- 1975-0102
- Abstract
- In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at V-DS = 1 V, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain (A(v)), unit-gain frequency (f(unity)), and cut-off frequency (f(T)). The Ge/GaAs HGD pnpn TFET demonstrated A(v) = 19.4 dB, f(unity) = 10 THz, f(T) = 0.487 THz and f(max) = 18THz.
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