Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation

Abstract

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at V-DS = 1 V, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain (A(v)), unit-gain frequency (f(unity)), and cut-off frequency (f(T)). The Ge/GaAs HGD pnpn TFET demonstrated A(v) = 19.4 dB, f(unity) = 10 THz, f(T) = 0.487 THz and f(max) = 18THz.