Sequential lateral crystallization of amorphous silicon on glass by blue laser annealing for high mobility thin-film transistors
- Authors
- Jung, Young Hun; Hon, Seungpyo; Lee, Suhui; Jin, Seonghyun; Kim, Tae-Woong; Chang, Yeoungjin; Jang, Jin
- Issue Date
- 1-Jul-2019
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Low-temperature polycrystalline silicon; Thin-film transistors; Blue laser annealing; Sequential lateral crystallization; Grain size; High mobility
- Citation
- THIN SOLID FILMS, v.681, pp.93 - 97
- Journal Title
- THIN SOLID FILMS
- Volume
- 681
- Start Page
- 93
- End Page
- 97
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1244
- DOI
- 10.1016/j.tsf.2019.04.023
- ISSN
- 0040-6090
- Abstract
- We report the thickness effect of amorphous silicon for the polycrystalline silicon (poly-Si) layer laterally crystallized by blue laser annealing (BLA) using 50 mu s melting time. The grain size is much larger and full width at half-maximum of Raman intensity is lower compared to those of the poly-Si by excimer laser annealing. It is found that the average width of lateral grain is wider than 3 mu m and full width of half maximum of Raman intensity for the BLA poly-Si with an optimum thickness of 90 nm is 3.32 cm(-1). The p-type poly-Si thin-film transistor with 90 nm exhibits field-effect mobility of 161.91 +/- 6.14 cm(2)/Vs and subthreshold swing of 227 +/- 7 mV/dec.
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Collections - IT융합대학 > 컴퓨터공학과 > 1. Journal Articles
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