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Properties of Cu2O Thin Films for All-Oxide Solar Cells
- Authors
- Lee, Gye Cheol; Jung, Yu Sup; Kim, Kyung Hwan
- Issue Date
- 24-Jul-2014
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- oxygen partial pressure ratio; RF magnetron sputtering; Cu2O
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.598, no.1, pp.62 - 68
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 598
- Number
- 1
- Start Page
- 62
- End Page
- 68
- ISSN
- 1542-1406
- Abstract
- In this work, p-type Cu2O thin films deposited by RF magnetron sputtering for Cu2O based all metal oxide solar cells were studied as a function of oxygen partial pressure ratio at room temperature. The Cu2O (111) x-ray diffraction peaks were indicated as a function of oxygen partial pressure ratio. Optical band gap energies of as-deposited Cu2O thin films ranged from 1.88 to 1.96eV as a function of oxygen partial pressure ratio. The resistivity and mobility of the p-type Cu2O thin film with an oxygen partial pressure ratio of 2.4% was 2 x10(4) omega center dot cm and 15.1cm(2)/V center dot s, respectively.
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Related Researcher
- Kim, Kyung Hwan
- College of IT Convergence (Department of Electrical Engineering)