O2-Enhanced surface treatment of Ge epitaxially grown on Si for heterogeneous Ge technology
- Authors
- Chen, X.; Huo, Y.; Harris, J.S.; Cho, S.; Park, B.-G.
- Issue Date
- 2014
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- epitaxial growth; germanium; germanium-on-silicon; photoluminescence; rapid thermal annealing; reduced-pressure chemical vapor deposition; surface treatment
- Citation
- Proceedings of the International Symposium on Consumer Electronics, ISCE
- Journal Title
- Proceedings of the International Symposium on Consumer Electronics, ISCE
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/13000
- DOI
- 10.1109/ISCE.2014.6884474
- ISSN
- 0000-0000
- Abstract
- In this work, in order to investigate the effects of annealing gases on the quality of Ge epitaxially grown on Si substrate, ex-situ rapid thermal annealing (RTA) processes with different gases have been performed. The Ge-on-Si samples were prepared by different growth techniques using reduced-pressure chemical vapor deposition (RPCVD), and then, samples annealed in the N 2, forming gas (FG), and O2 were compared with an unannealed one to confirm the improvements in Ge quality. To evaluate the material quality, photoluminescence (PL) measurements have been carried out for the samples at room temperature. Among the prepared samples, the O 2-annealed sample showed the highest PL signals regardless of growth techniques, which supports that an ex-situ RTA in the O2 ambient would be an effective technique for surface treatment of Ge in the fabrication processes of Ge-based electronic and photonic devices. © 2014 IEEE.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/13000)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.