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The sodium ion-assisted memory behaviour of a silicon nanowire partial composite field-effect transistor
- Issue Date
- 2014
- Publisher
- ROYAL SOC CHEMISTRY
- Citation
- CHEMICAL COMMUNICATIONS, v.50, no.31, pp.4112 - 4114
- Journal Title
- CHEMICAL COMMUNICATIONS
- Volume
- 50
- Number
- 31
- Start Page
- 4112
- End Page
- 4114
- ISSN
- 1359-7345
- Abstract
- A partial composite consisting of rough silicon nanowires and a polymer dielectric layer with sufficient Na+ ions was used to create a field-effect transistor based memory device. Addition of Na+ ions helped compensate for water molecule trapped charges leading to narrow hysteresis characteristics and stable memory retention stability of the resulting device.
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Related Researcher
- Lee, Tae Il
- Engineering (Department of Materials Science & Engineering)