Metal-insulator-silicon semiconductor photodetectors using ZnO nanocones as an efficient anti-reflective coating
- Authors
- Kim, Hyunjin; Bae, Joonho
- Issue Date
- Nov-2013
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- anti-reflective coating; nanocones; photodetectors; ZnO
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.210, no.11, pp.2510 - 2514
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 210
- Number
- 11
- Start Page
- 2510
- End Page
- 2514
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14189
- DOI
- 10.1002/pssa.201329323
- ISSN
- 1862-6300
- Abstract
- Novel ZnO nanocone anti-reflective coating (ARC) was realized on ITO-Si metal-insulator-semiconductor (MIS) photodetector. The ZnO nanocone-coated device demonstrated significant suppression of reflectance compared with that of a conventional planar device. The ZnO nanocone MIS photodetector showed a 15% enhanced external quantum efficiency (EQE) compared to a planar MIS photodetector, and indicated a flat response over a broad range of wavelength from the visible to IR spectra. In addition, the EQE of the nanocone device exhibited a stable response with respect to the angle of incidence, which indicates improved device characteristics of the ZnO nanocone ARC. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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