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Metal-insulator-silicon semiconductor photodetectors using ZnO nanocones as an efficient anti-reflective coating

Authors
Kim, HyunjinBae, Joonho
Issue Date
Nov-2013
Publisher
WILEY-V C H VERLAG GMBH
Keywords
anti-reflective coating; nanocones; photodetectors; ZnO
Citation
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.210, no.11, pp.2510 - 2514
Journal Title
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume
210
Number
11
Start Page
2510
End Page
2514
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/14189
DOI
10.1002/pssa.201329323
ISSN
1862-6300
Abstract
Novel ZnO nanocone anti-reflective coating (ARC) was realized on ITO-Si metal-insulator-semiconductor (MIS) photodetector. The ZnO nanocone-coated device demonstrated significant suppression of reflectance compared with that of a conventional planar device. The ZnO nanocone MIS photodetector showed a 15% enhanced external quantum efficiency (EQE) compared to a planar MIS photodetector, and indicated a flat response over a broad range of wavelength from the visible to IR spectra. In addition, the EQE of the nanocone device exhibited a stable response with respect to the angle of incidence, which indicates improved device characteristics of the ZnO nanocone ARC. (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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