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Influence of RF Magnetron Sputtering Condition on the ZnO Passivating Layer for Dye-sensitized Solar Cells
- Authors
- Rhee, S.W.; Choi, H.W.
- Issue Date
- Apr-2013
- Publisher
- 한국전기전자재료학회
- Keywords
- Dye-sensitized solar cells; Electron recombination; RF-magnetron sputter; ZnO passivating layer
- Citation
- Transactions on Electrical and Electronic Materials, v.14, no.2, pp.86 - 89
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 14
- Number
- 2
- Start Page
- 86
- End Page
- 89
- ISSN
- 1229-7607
- Abstract
- Dye-sensitized solar cells have a FTO/TiO2/Dye/Electrode/Pt counter electrode structure, yet more than a 10% electron loss occurs at each interface. A passivating layer between the TiO2/FTO glass interface can prevent this loss of electrons. In theory, ZnO has excellent electron collecting capabilities and a 3.4 eV band gap, which suppresses electron mobility. FTO glass was coated with ZnO thin films by RF-magnetron sputtering; each film was deposited under different O2:Ar ratios and RF-gun power. The optical transmittance of the ZnO thin film depends on the thickness and morphology of ZnO. The conversion efficiency was measured with the maximum value of 5.22% at an Ar:O2 ratio of 1:1 and RF-gun power of 80 W, due to effective prevention of the electron recombination into electrolytes. © 2013 KIEEME. All rights reserved.
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Related Researcher
- Choi, Hyung Wook
- College of IT Convergence (Department of Electrical Engineering)