Toward a Fully Analytical Contact Resistance Expression in Organic Transistors
- Authors
- Kim, Chang-Hyun; Horowitz, Gilles
- Issue Date
- 10-Apr-2019
- Publisher
- MDPI
- Keywords
- organic field-effect transistors; contact resistance; device physics
- Citation
- MATERIALS, v.12, no.7
- Journal Title
- MATERIALS
- Volume
- 12
- Number
- 7
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/1588
- DOI
- 10.3390/ma12071169
- ISSN
- 1996-1944
- Abstract
- Contact resistance is a major characteristic of organic transistors, and its importance has received renewed attention due to the recent revelation of mobility overestimation. In this article, we propose a method to describe the contact resistance as a closed-form compact equation of the materials, interfaces, and geometrical parameters. The proposed model allows us to quantitatively understand the correlation between charge-injection and transport properties, while providing a tool for performance prediction and optimization. This theory is applied to a set of experimentally fabricated devices to exemplify how to utilize the model in practice.
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