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A Facile Route To Recover Intrinsic Graphene over Large Scale
- Authors
- Shin, Dong-Wook; Lee, Hyun Myoung; Yu, Seong Man; Lim, Kwang-Soo; Jung, Jae Hoon; Kim, Min-Kyu; Kim, Sang-Woo; Han, Jae-Hee; Ruoff, Rodney S.; Yoo, Ji-Beom
- Issue Date
- Sep-2012
- Publisher
- AMER CHEMICAL SOC
- Keywords
- graphene; transistor; intrinsic properties; buffed oxide etch (BOE); PMMA; H2O/O-2 redox system; Fermi level
- Citation
- ACS NANO, v.6, no.9, pp.7781 - 7788
- Journal Title
- ACS NANO
- Volume
- 6
- Number
- 9
- Start Page
- 7781
- End Page
- 7788
- ISSN
- 1936-0851
- Abstract
- The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H2O/O-2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H2O/O-2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H2O/O-2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.
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Related Researcher
- Han, Jae Hee
- Engineering (Department of Materials Science & Engineering)