Characterization of the ZnS thin film buffer layer for Cu(In, Ga)Se-2 solar cells deposited by chemical bath deposition process with different solution concentrations
- Authors
- Zhong, Zhao Yang; Cho, Eou Sik; Kwon, Sang Jik
- Issue Date
- 15-Aug-2012
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- ZnS thin films; Chemical bath deposition (CBD); Cu(In Ga)Se-2 solar cell; Solution concentration; Band gap; Optical properties
- Citation
- MATERIALS CHEMISTRY AND PHYSICS, v.135, no.2-3, pp.287 - 292
- Journal Title
- MATERIALS CHEMISTRY AND PHYSICS
- Volume
- 135
- Number
- 2-3
- Start Page
- 287
- End Page
- 292
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16232
- DOI
- 10.1016/j.matchemphys.2012.03.090
- ISSN
- 0254-0584
- Abstract
- ZnS buffer layer thin films for Cu(In,Ga)Se-2 (CIGS) have been prepared by chemical bath deposition (CBD) technique onto the ITO coated glasses at 80 degrees C bath temperature, using zinc sulfate hepta-hydrate (ZnSO4 center dot 7H(2)O), thiourea (SC(NH2)(2)) and ammonia (NH4OH) as reacting chemicals. The concentrations of thiourea and ammonia were varied while the concentration of ZnSO4 was immobilized at 0.03 M. The thickness, transmittance, morphology of ZnS films were measured and the band gap was calculated according to the equation related with the absorption coefficient. Through the analysis of the parameters, we could conclude that the physical and optical properties of different ZnS thin films were influenced severely by the concentration of the two reacting chemicals and then the optimal concentration group of SC(NH2)(2) and NH4OH solutions can come to 0.3 M and 1.5 M, respectively. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.