Formation of CuInSe2 absorber by rapid thermal processing of electron-beam evaporated stacked elemental layers
- Authors
- Li, Zhao-Hui; Cho, Eou-Sik; Kwon, Sang Jik; Dagenais, Mario
- Issue Date
- Apr-2012
- Publisher
- SPRINGER
- Citation
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.23, no.4, pp.964 - 971
- Journal Title
- JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
- Volume
- 23
- Number
- 4
- Start Page
- 964
- End Page
- 971
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16491
- DOI
- 10.1007/s10854-011-0528-1
- ISSN
- 0957-4522
- Abstract
- Copper indium diselenide (CuInSe2) film was formed using the rapid thermal process (RTP) of electron-beam (E-beam) evaporated Cu-In stacked elemental layers as an absorber layer for chalcopyrite solar cells. The E-beam evaporation method could accurately control the thickness of each elemental layer so that the chemical composition of Cu-In precursor could also be controlled by changing the thickness ratio of the Cu/In metal layer. The device-quality Cu-deficient CuInSe2 film was obtained when the thickness ratio of Cu/In was about 1/2.5. Otherwise, the RTP process time was also certified as one of the most important parameters of RTP when the temperature was over 550 degrees C. A single-phase CuInSe2 was successfully obtained after rapid thermal process under 580 degrees C for 3 min. Finally, the growth mechanism of CuInSe2 film during RTP process was also summarized.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/16491)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.