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Properties of GAZO/Ag/GAZO multilayer films prepared by FTS system
- Issue Date
- Jan-2012
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- GAZO/Ag/GAZO; Ga-Al doped ZnO; Multilayer; FTS
- Citation
- MICROELECTRONIC ENGINEERING, v.89, pp.124 - 128
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 89
- Start Page
- 124
- End Page
- 128
- ISSN
- 0167-9317
- Abstract
- GAZO (Ga-Al doped ZnO)/Ag/GAZO multilayer films were prepared by Facing Target Sputtering (Frs) methods at room temperature. The GAZO multilayer films consisted of various thickness Ag and top GAZO thin film. The electrical, optical and structural properties of the films were investigated using a four-point probe, an UV/vis spectrometer, a X-ray diffractometer (XRD), a field emission scanning electron microscope (FE-SEM) and atomic force microscopy (AFM). For the multilayer film with top and bottom GAZO thickness of 50 nm and intermediate Ag thickness of 12 nm, it exhibits the maximum figure of merit of 73.05 x 10(-3) Omega(-1) with sheet resistance of 9.1 Omega/sq and transmittance of 96.4% at wavelength of 550 nm. (C) 2011 Elsevier B.V. All rights reserved.
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Related Researcher
- Kim, Kyung Hwan
- College of IT Convergence (Department of Electrical Engineering)