Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect
- Authors
- 조성재; 김형진; 성민철; 박병국; James S. Harris, Jr.
- Issue Date
- Sep-2012
- Publisher
- 대한전자공학회
- Keywords
- Silicon photodetector; p-i-n structure; optical interconnect; device simulation
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.12, no.3, pp.370 - 376
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 12
- Number
- 3
- Start Page
- 370
- End Page
- 376
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/17129
- DOI
- 10.5573/JSTS.2012.12.3.370
- ISSN
- 1598-1657
- Abstract
- In this work, design considerations for highperformance silicon photodetector are thoroughly investi- gated. Besides the critical dimensions of device, guidelines for process architecture are suggested. Abiding by those criteria for improving both direct-current (DC) and alternating-current (AC) perfor- mances, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation. An f-3dB of 80 GHz at an operating voltage of 1 V was obtained.
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