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Properties of Ga-Al Doped ZnO with Various Thicknesses Prepared by Facing Targets Sputtering Method
- Issue Date
- 2012
- Publisher
- TAYLOR & FRANCIS LTD
- Keywords
- Ga-Al doped ZnO; TCO; FTS; various thicknesses
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.566, pp.80 - 86
- Journal Title
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS
- Volume
- 566
- Start Page
- 80
- End Page
- 86
- ISSN
- 1542-1406
- Abstract
- Gallium-Aluminum doped Zinc Oxide (Ga-Al doped ZnO) thin films prepared on glass substrates by using facing targets sputtering methods. Electrical, structural and optical properties of Ga-Al doped ZnO thin film with various thicknesses were studied in detail. Crystal structure of the Ga-Al doped films was hexagonal wurtzite. Increased thickness of Ga-Al doped ZnO thin film, the resistivity decreased and crystallity improved. As the results, The resistivity of Ga-Al doped ZnO thin films with thickness of 500 nm exhibited 4.17x10(-4) Omega.cm and average optical transmittance of all thin films showed above 85% in the visible range.
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Related Researcher
- Choi, Hyung Wook
- College of IT Convergence (Department of Electrical Engineering)