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Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조성재 | - |
| dc.date.available | 2020-04-24T06:37:56Z | - |
| dc.date.issued | 2016-09-28 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28591 | - |
| dc.title | Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2016 International Conference on Solid State Devices and Materials (SSDM) | - |
| dc.citation.conferencePlace | 일본 | - |
| dc.citation.conferencePlace | Tsukuba, Japan | - |
| dc.citation.title | Abstract of 2016 SSDM | - |
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Collections - IT융합대학 > 전자공학과 > 2. Conference Papers
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)