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Accurate Design of Si-Compatible Tunneling Field-Effect Transistor with GeSn Source Junction by Ab Initio Calculation and Device Simulation
- Authors
- 조성재
- Issue Date
- 28-Sep-2016
- Conference Name
- Abstract of 2016 SSDM
- Place
- 일본
Tsukuba, Japan
- metadata.conference.dc.citation.conferenceName
- 2016 International Conference on Solid State Devices and Materials (SSDM)
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Collections - IT융합대학 > 전자공학과 > 2. Conference Papers
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)