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First-principle study of GeSn alloys and its application to tunneling field-effect transistor
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조성재 | - |
| dc.date.available | 2020-04-24T06:38:24Z | - |
| dc.date.issued | 2016-07-04 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28624 | - |
| dc.title | First-principle study of GeSn alloys and its application to tunneling field-effect transistor | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA) | - |
| dc.citation.conferencePlace | 대한민국 | - |
| dc.citation.conferencePlace | Jeju, Korea | - |
| dc.citation.endPage | 1 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.title | Final Program of ISPSA 2016 | - |
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)