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First-principle study of GeSn alloys and its application to tunneling field-effect transistor

Authors
조성재
Issue Date
4-Jul-2016
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28624
Conference Name
Final Program of ISPSA 2016
Place
대한민국
Jeju, Korea
metadata.conference.dc.citation.conferenceName
The 18th International Symposium on the Physics of Semiconductors and Applications (ISPSA)
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IT융합대학 > 전자공학과 > 2. Conference Papers

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IT (Major of Electronic Engineering)
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