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Sub-10 nm Ge/GaAs Heterojunction-based Tunneling Field-Effect Transistor with Vertical Tunneling Operation

Authors
조성재
Issue Date
29-Jun-2015
URI
https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/28809
Conference Name
Proceedings of AWAD 2015
Place
일본
대한민국 제주
metadata.conference.dc.citation.conferenceName
2015 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD)
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IT (Major of Electronic Engineering)
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