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Dependence of Device Performances on Fin Dimensions in AlGaN/GaN Recessed-Gate Nanoscale FinFET
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 조성재 | - |
| dc.date.available | 2020-04-24T07:40:16Z | - |
| dc.date.issued | 2014-06-23 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/29046 | - |
| dc.title | Dependence of Device Performances on Fin Dimensions in AlGaN/GaN Recessed-Gate Nanoscale FinFET | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 2014 The 18th IEEE International Symposium on Consumer Electronics (ISCE) | - |
| dc.citation.conferencePlace | 미국 | - |
| dc.citation.conferencePlace | Jeju, Republic of Korea | - |
| dc.citation.endPage | 380 | - |
| dc.citation.startPage | 379 | - |
| dc.citation.title | Proceedings of 2014 ISCE | - |
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)