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Dependence of Device Performances on Fin Dimensions in AlGaN/GaN Recessed-Gate Nanoscale FinFET
- Authors
- 조성재
- Issue Date
- 23-Jun-2014
- Conference Name
- Proceedings of 2014 ISCE
- Place
- 미국
Jeju, Republic of Korea
- metadata.conference.dc.citation.conferenceName
- 2014 The 18th IEEE International Symposium on Consumer Electronics (ISCE)
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Collections - IT융합대학 > 전자공학과 > 2. Conference Papers
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)