Structural, Optical and Electrical Properties of NiO Thin Films Deposited on SiC Substrate by Using a Solution Process
- Authors
- Cho, Seulki; Seo, Ji-Ho; Lee, Young-Jae; Moon, Byungmoo; Lee, Sang-Kwon; Moon, Kyong-Sook; Koo, Sang-Mo
- Issue Date
- Dec-2018
- Publisher
- AMER SCIENTIFIC PUBLISHERS
- Keywords
- Nickel Oxide; Silicon Carbide; Heterojunction; Sol-Gel Process
- Citation
- NANOSCIENCE AND NANOTECHNOLOGY LETTERS, v.10, no.12, pp.1700 - 1706
- Journal Title
- NANOSCIENCE AND NANOTECHNOLOGY LETTERS
- Volume
- 10
- Number
- 12
- Start Page
- 1700
- End Page
- 1706
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/3026
- DOI
- 10.1166/nnl.2018.2832
- ISSN
- 1941-4900
- Abstract
- In this study, we report on the fabrication of p-NiO/n-4H-SiC heterostructure diodes by using a solution process. The NiO layer was formed from mixing nickel acetate tetrahydrate as a nickel precursor, 2-methoxyethanol as a solvent and monoethanolamine as a stabilizer and spin coating onto a SiC substrate. We compared the properties of NiO layers resulting from different molar ratios, ranging from 0.5 to 1.5 M. I-V characteristics of NiO/4H-SiC heterojunction diodes exhibited a nonlinear curve typical of p-n junctions with a turn-on voltage and a rectification ratio of 2.0 V and similar to 10(7), respectively.
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