Self-Rectifying DNTT Memristors
- Authors
- Kim, Chang-Hyun
- Issue Date
- Nov-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- DNTT; organic electronics; diodes; memristors; neuromorphic computing
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.39, no.11, pp.1736 - 1739
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 39
- Number
- 11
- Start Page
- 1736
- End Page
- 1739
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/3157
- DOI
- 10.1109/LED.2018.2871847
- ISSN
- 0741-3106
- Abstract
- In this letter, a new method for obtaining dynamic hysteresis in flexible thienoacene-based diodes is reported. A major strategy lies in the incorporation of a polymeric interlayer for dual purposes: the polarity inversion and memory effect. It is discovered that the proposed interface engineering transforms a regular organic diode into an efficient self-rectifying memristor, a highly desirable element for emerging neuromorphic applications. An electrical reconfiguration mechanism based on the field behavior at the blocking junction is conceptualized as a guideline for research on related materials and devices.
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