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Mechanism for nitrogen-enhanced negative bias temperature instability (NBTI) in state-of-the-art MOSFETs with ultrathin Si oxynitride gate dielectricsMechanism for nitrogen-enhanced negative bias temperature instability (NBTI) in state-of-the-art MOSFETs with ultrathin Si oxynitride gate dielectrics
- Alternative Title
- Mechanism for nitrogen-enhanced negative bias temperature instability (NBTI) in state-of-the-art MOSFETs with ultrathin Si oxynitride gate dielectrics
- Authors
- 이은철
- Issue Date
- 5-Nov-2007
- Place
- South Korea
경원대학교
- metadata.conference.dc.citation.conferenceName
- 한국바이오칩학회 2007 추계학술대회
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Collections - 바이오나노대학 > 나노물리학과 > 2. Conference Papers
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Related Researcher
- Lee, Eun Cheol
- BioNano Technology (Department of Physics)