Processing and Characterization of Ultra-thin Poly-crystalline Silicon for Memory and Logic Applications
- Authors
- Yu, Eunseon; Kim, Youngmin; Lee, Junsoo; Cho, Yongbeom; Lee, Won Jae; Cho, Seongjae
- Issue Date
- Apr-2018
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Ultra-thin poly-Si; low-pressure chemical vapor deposition; post-deposition annealing; bi-directional domains
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.18, no.2, pp.172 - 179
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 18
- Number
- 2
- Start Page
- 172
- End Page
- 179
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/3913
- DOI
- 10.5573/JSTS.2018.18.2.172
- ISSN
- 1598-1657
- Abstract
- In this work, processing and characterization of ultra-thin poly-Si are performed for memory and logic applications. Ultra-thin poly-Si layers with different thicknesses were prepared on the deposited oxide by low-pressure chemical vapor deposition (LPCVD). Deposited poly-Si were doped through POCl3 gas-phase doping at 900 degrees C, in which 10-nm thickness was reduced. Afterward, post-deposition annealing (PDA) under different conditions were performed. Thicknesses of deposited poly-Si films were 20, 30, and 50 nm. The following PDA improves the crystallinity, which has been confirmed by high-resolution transmission electron microscopy (HR-TEM) with fast Fourier transform (FFT) imaging and sheet resistivity lowering. Also, superior crystalline film is observed in the thinner film and the bi-directionally arranged domains are obtained from the 40-nm poly-Si film.
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Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
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