SiGe Heterojunction FinFET Towards Tera-Hertz Applications
- Authors
- Yu, Eunseon; Lee, Won-Jun; Jung, Jongwan; Cho, Seongjae
- Issue Date
- Feb-2018
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- FinFET; SiGe; Shell channel; Heterojunction; Valence band offset; Logic technology
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.72, no.4, pp.527 - 532
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 72
- Number
- 4
- Start Page
- 527
- End Page
- 532
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4089
- DOI
- 10.3938/jkps.72.527
- ISSN
- 0374-4884
- Abstract
- In this work, a novel structure FinFET having an ultra-thin SiGe shell channel forming a heterojunction with Si core is proposed and characterized, with an emphasis on high-speed operation capability in the tera-hertz (THz) regime, by 3-dimensional (3-D) device simulation. The proposed device is operated in the p-type enhancement mode and the ultra-thin SiGe channel confines the mobile holes very effectively by the help of the valence band offset (VBO) between SiGe channel and Si core. The simulations with multiple drift and diffusion models and quantum mechanical models for higher accuracy allow to predict the minimum channel thickness and Ge content of 2 nm and 40%, respectively, for suppressing the hole leakage outflowing over the VBO. Also, scalability was checked down to 5 nm for achieving the upcoming logic technology nodes. Cut-off frequency (f (T) ) and maximum oscillation frequency (f (max)) are obtained to be 240 GHz and 1.04 THz at a low drive voltage as -0.7 V, respectively.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4089)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.