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Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p(+)-Si memory device
- Authors
- Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- Feb-2018
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- WOx RRAM; Bipolar resistive switching; Rapid thermal oxidation (RTO); MIS structure; Space-charge-limited current (SCLC)
- Citation
- SOLID-STATE ELECTRONICS, v.140, pp.51 - 54
- Journal Title
- SOLID-STATE ELECTRONICS
- Volume
- 140
- Start Page
- 51
- End Page
- 54
- ISSN
- 0038-1101
- Abstract
- In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p(+)-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)