Fabrication and characterization of a fully si compatible forming-free GeOxResistive switching random-access memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, J.Y. | - |
dc.contributor.author | Kim, Y. | - |
dc.contributor.author | Kworn, I. | - |
dc.contributor.author | Cho, I.H. | - |
dc.contributor.author | Lee, J.Y. | - |
dc.contributor.author | Kim, S.G. | - |
dc.contributor.author | Cho, S. | - |
dc.date.available | 2020-02-27T12:43:50Z | - |
dc.date.created | 2020-02-12 | - |
dc.date.issued | 2018 | - |
dc.identifier.issn | 1548-3770 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4384 | - |
dc.description.abstract | Recently, resistive switching random-access memory (ReRAM) has been considered as one of the most promising nonvolatile memory (NVM) technologies, owing to its high scalability, low power consumption, and fast switching speed [1]. In this work, we designed and fabricated Ni/GeOx/p+ Si ReRAM having narrower parameter distribution, robust endurance, and enhanced superiority in Si processing compatibility. Ge has shown wide applications for Si CMOS extension and photonics towards the advanced VLSI [2], and another application for NVM is reported in this work. The process architecture and measurement results are demonstrated, and the annealing effects are investigated. © 2018 IEEE. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.relation.isPartOf | Device Research Conference - Conference Digest, DRC | - |
dc.subject | RRAM | - |
dc.subject | Fabrication and characterizations | - |
dc.subject | High scalabilities | - |
dc.subject | Low-power consumption | - |
dc.subject | Non-volatile memory technology | - |
dc.subject | Parameter distributions | - |
dc.subject | Process architecture | - |
dc.subject | Random access memory | - |
dc.subject | Resistive switching | - |
dc.subject | Fabrication | - |
dc.title | Fabrication and characterization of a fully si compatible forming-free GeOxResistive switching random-access memory | - |
dc.type | Article | - |
dc.type.rims | ART | - |
dc.description.journalClass | 1 | - |
dc.identifier.doi | 10.1109/DRC.2018.8442248 | - |
dc.identifier.bibliographicCitation | Device Research Conference - Conference Digest, DRC, v.2018-June | - |
dc.identifier.scopusid | 2-s2.0-85053181973 | - |
dc.citation.title | Device Research Conference - Conference Digest, DRC | - |
dc.citation.volume | 2018-June | - |
dc.contributor.affiliatedAuthor | Lee, J.Y. | - |
dc.contributor.affiliatedAuthor | Kim, Y. | - |
dc.contributor.affiliatedAuthor | Cho, S. | - |
dc.type.docType | Conference Paper | - |
dc.subject.keywordPlus | RRAM | - |
dc.subject.keywordPlus | Fabrication and characterizations | - |
dc.subject.keywordPlus | High scalabilities | - |
dc.subject.keywordPlus | Low-power consumption | - |
dc.subject.keywordPlus | Non-volatile memory technology | - |
dc.subject.keywordPlus | Parameter distributions | - |
dc.subject.keywordPlus | Process architecture | - |
dc.subject.keywordPlus | Random access memory | - |
dc.subject.keywordPlus | Resistive switching | - |
dc.subject.keywordPlus | Fabrication | - |
dc.description.journalRegisteredClass | scopus | - |
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