Fabrication and characterization of a fully si compatible forming-free GeOxResistive switching random-access memory
- Authors
- Lee, J.Y.; Kim, Y.; Kworn, I.; Cho, I.H.; Lee, J.Y.; Kim, S.G.; Cho, S.
- Issue Date
- 2018
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- Device Research Conference - Conference Digest, DRC, v.2018-June
- Journal Title
- Device Research Conference - Conference Digest, DRC
- Volume
- 2018-June
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/4384
- DOI
- 10.1109/DRC.2018.8442248
- ISSN
- 1548-3770
- Abstract
- Recently, resistive switching random-access memory (ReRAM) has been considered as one of the most promising nonvolatile memory (NVM) technologies, owing to its high scalability, low power consumption, and fast switching speed [1]. In this work, we designed and fabricated Ni/GeOx/p+ Si ReRAM having narrower parameter distribution, robust endurance, and enhanced superiority in Si processing compatibility. Ge has shown wide applications for Si CMOS extension and photonics towards the advanced VLSI [2], and another application for NVM is reported in this work. The process architecture and measurement results are demonstrated, and the annealing effects are investigated. © 2018 IEEE.
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