Electrical Characteristics of Tunneling Field-effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs

Abstract

This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (I-on), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (L-G) was scaled down. The proposed TFET with a L-G of 5 nm operated with an I-on of 1.3 mA/mu m, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (V-DS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional L-G of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.