Electrical Characteristics of Tunneling Field-effect Transistors using Vertical Tunneling Operation Based on AlGaSb/InGaAs
- Authors
- Kim, Bo Gyeong; Kwon, Ra Hee; Seo, Jae Hwa; Yoon, Young Jun; Jang, Young In; Cho, Min Su; Lee, Jung-Hee; Cho, Seongjae; Kang, In Man
- Issue Date
- Nov-2017
- Publisher
- SPRINGER SINGAPORE PTE LTD
- Keywords
- Tunneling field-effect transistor; Heterojunction; Vertical tunneling; Short-channel Effect; Drain-induced barrier thinning
- Citation
- JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY, v.12, no.6, pp.2324 - 2332
- Journal Title
- JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
- Volume
- 12
- Number
- 6
- Start Page
- 2324
- End Page
- 2332
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/5555
- DOI
- 10.5370/JEET.2017.12.6.2324
- ISSN
- 1975-0102
- Abstract
- This paper presents the electrical performances of novel AlGaSb/InGaAs heterojunction-based vertical-tunneling field-effect transistor (VTFET). The device performance was investigated in views of the on-state current (I-on), drain-induced barrier thinning (DIBT), and subthreshold swing (SS) as the gate length (L-G) was scaled down. The proposed TFET with a L-G of 5 nm operated with an I-on of 1.3 mA/mu m, a DIBT of 40 mV/V, and an SS of 23 mV/dec at a drain voltage (V-DS) of 0.23 V. The proposed TFET provided approximately 25 times lower DIBT and 12 times smaller SS compared with the conventional L-G of 5 nm TFET. The AlGaSb/InGaAs VTFET showed extremely high scalability and strong immunity against short-channel effects.
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