Investigation of Retention Characteristics Caused by Charge Loss for Charge Trap NAND Flash Memory
- Authors
- Kim, Seunghyun; Lee, Sang-Ho; Park, Sang-Ku; Kim, Youngmin; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- Oct-2017
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Retention; charge-trap flash; NAND; SONOS; charge loss; transient analysis
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.17, no.5, pp.584 - 590
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 17
- Number
- 5
- Start Page
- 584
- End Page
- 590
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/5625
- DOI
- 10.5573/JSTS.2017.17.5.584
- ISSN
- 1598-1657
- Abstract
- In this paper, we investigate the retention characteristics cause by loss of trapped charges in charge-trap NAND flash memory. We fabricated silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices having different widths and lengths for setting up a more accurate retention model. For higher accuracy in the measurement results, we have set up a fast-response measurement scheme to have a closer look at the retention characteristics, using a waveform generator and a fast-measurement unit. Drain current can be measurement immediately after a program operation with a mu s-level resolution. Transient analysis on the retention characteristics over a very short time period is performed along with the long-time measurement results. As the result, a more succinct set of clues for understanding the initial charge loss and the charge redistribution are provided.
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Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
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