Film Density Controlled-InGaZnO Multi-Stacked Channel Based Thin-Film Transistors Using a Solution Process

Abstract

Solution-processed metal oxide semiconductors-based thin-film transistors have received much attention due to simple and low-cost processing, and a wide selection of materials. However, low electrical performance has been an issue for many applications. To address this, we demonstrate here high-performance InGaZnO thinfilm transistors created via precise coating technologies in a multi-stacking process. The multi-stack process for InGaZnO films with low and high mole solution concentrations facilitates control of film densities. Furthermore, roughness in terms of defect sites between channel and dielectric interfaces and physical void defects are minimized. The results demonstrated high saturation mobility, large I-on/off, and stiff S. S for InGaZnO (9: 1: 2, high density) and InGaZnO (2:1:1, low density) thin-film transistors over 7 cm(2) V-1 s(-1), similar to 10(8), and below 0.6 V dec(-1), respectively.